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PD - 97544
AUTOMOTIVE GRADE
HEXFET(R) Power MOSFET
Features

AUIRFR4105Z AUIRFU4105Z
55V 24.5m 30A
Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
D
V(BR)DSS RDS(on) max. ID
G S
Description
Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
D S
D-Pak AUIRFR4105Z
G D
G
I-Pak AUIRFU4105Z
S
D G
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified.
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS EAS (tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw
Max.
30 21 120 48 0.32 20 29 46 See Fig.12a, 12b, 15, 16 -55 to + 175
Units
A W W/C V mJ A mJ C
h
d
g
Thermal Resistance
RJC RJA RJA
300 10 lbfyin (1.1Nym)
Junction-to-Case j
Parameter
Typ.
--- --- ---
Max.
3.12 50 110
Units
C/W
Junction-to-Ambient (PCB mount) Junction-to-Ambient
i
HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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1
07/23/2010
AUIRFR/U4105Z
Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55 --- --- 2.0 16 --- --- --- --- --- 0.053 19 --- --- --- --- --- --- --- --- 24.5 4.0 --- 20 250 200 -200
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 18A V VDS = VGS, ID = 250A S VDS = 15V, ID = 18A A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Coss Coss Coss eff. Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- --- --- --- --- --- --- --- 18 5.3 7.0 10 40 26 24 4.5 7.5 740 140 74 450 110 180 27 --- --- --- --- --- --- --- --- --- --- --- --- --- --- nC
Conditions
ID = 18A VDS = 44V VGS = 10V VDD = 28V ID = 18A RG = 24.5 VGS = 10V Between lead,
e e
ns
D
nH
6mm (0.25in.) from package
G
pF
S and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
f
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 19 14 30 A 120 1.3 29 21 V ns nC
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 18A, VGS = 0V TJ = 25C, IF = 18A, VDD = 28V di/dt = 100A/s
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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AUIRFR/U4105Z
Qualification Information
Automotive (per AEC-Q101) Qualification Level
Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-PAK I-PAK MSL1 MSL1 Class M2 (200V) AEC-Q101-002 Class H1A (500V) AEC-Q101-001 Class C5 (1125V) AEC-Q101-005 Yes
Moisture Sensitivity Level Machine Model Human Body Model Charged Device Model RoHS Compliant
ESD
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report.
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3
AUIRFR/U4105Z
1000
TOP
VGS
1000
TOP
VGS
15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V
100
10
10
1
4.5V 60s PULSE WIDTH Tj = 25C
4.5V 60s PULSE WIDTH Tj = 175C
1 0.1 0
0.1 0.1 0
1
10
100 100
1
10
100 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
30
Gfs, Forward Transconductance (S)
T J = 175C 25 20 15 10 5 0 0 10 20 30 40 ID, Drain-to-Source Current (A) T J = 25C
ID, Drain-to-Source Current ()
100
T J = 175C
10
T J = 25C
1
VDS = 25V 60s PULSE WIDTH
0 4 5 6 7 8 9 10
VDS = 8.0V 380s PULSE WIDTH
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance Vs. Drain Current
4
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AUIRFR/U4105Z
1200
1000
C rss = C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C oss = C ds + C gd
20
ID= 18A VDS= 44V VDS= 28V VDS= 11V
16
C, Capacitance (pF)
800
Ciss
12
600
8
400
200
Coss Crss
4
FOR TEST CIRCUIT SEE FIGURE 13
0 1 10 100
0 0 5 10 15
20
25
30
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000.0
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
100.0 T J = 175C 10.0
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10 100sec 1 Tc = 25C Tj = 175C Single Pulse 1 10
1.0
T J = 25C VGS = 0V
1msec 10msec 100 1000
0.1 0.0 0.5 1.0 1.5 2.0 VSD, Source-toDrain Voltage (V)
0.1
VDS , Drain-toSource Voltage (V)
nce
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
AUIRFR/U4105Z
30
2.5
25
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 18A VGS = 10V
2.0
ID , Drain Current (A)
20
15
1.5
10
1.0
5
0 25 50 75 100 125 150 175
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
T J , Junction Temperature (C)
T J , Junction Temperature (C)
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Normalized On-Resistance Vs. Temperature
10
Thermal Response ( Z thJC )
D = 0.50
1
0.20 0.10 0.05 0.02 0.01
R1 R1 J 1 2 R2 R2 R3 R3 3 C 3
0.1
J
1
2
Ri (C/W) i (sec) 1.100 0.000174 1.601 0.000552 0.418 0.007193
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.001 0.01
0.001 1E-006 1E-005 0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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AUIRFR/U4105Z
120
15V
EAS, Single Pulse Avalanche Energy (mJ)
VDS
L
DRIVER
100
ID 2.0A 3.5A BOTTOM 18A
TOP
RG
VGS 20V
D.U.T
IAS tp
80
+ V - DD
A
60
0.01
40
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS tp
20
0 25 50 75 100 125 150 175
Starting T J, Junction Temperature (C)
I AS
Fig 12b. Unclamped Inductive Waveforms
QG
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
10 V
QGS VG QGD
4.5
VGS(th) Gate threshold Voltage (V)
4.0
Charge
3.5
Fig 13a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
ID = 250A
3.0
50K 12V .2F .3F
2.5
D.U.T. VGS
3mA
+ V - DS
2.0 -75 -50 -25 0 25 50 75 100 125 150 175
T J , Temperature ( C )
IG ID
Current Sampling Resistors
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Fig 13b. Gate Charge Test Circuit
Fig 14. Threshold Voltage Vs. Temperature
7
AUIRFR/U4105Z
100
Duty Cycle = Single Pulse
Avalanche Current (A)
10
0.01 0.05 0.10
Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax
1
0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current Vs.Pulsewidth
30
EAR , Avalanche Energy (mJ)
25
TOP Single Pulse BOTTOM 1% Duty Cycle ID = 18A
20
15
10
5
0 25 50 75 100 125 150
Starting T J , Junction Temperature (C)
Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. 175 D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
8
Fig 16. Maximum Avalanche Energy Vs. Temperature
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AUIRFR/U4105Z
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test
V DD
VDD
+ -
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
*
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
RD
V DS V GS RG 10V
Pulse Width 1 s Duty Factor 0.1 %
D.U.T.
+
-V DD
Fig 18a. Switching Time Test Circuit
VDS 90%
10% VGS
td(on) tr t d(off) tf
Fig 18b. Switching Time Waveforms
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AUIRFR/U4105Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUFR4105Z
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR/U4105Z
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak Part Marking Information
Part Number
AUFU4105Z
IR Logo
YWWA
XX or XX
Date Code Y= Year WW= Work Week A= Automotive, LeadFree
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRFR/U4105Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive max. junction temperature. (See fig. 11). avalanche performance. Limited by TJmax, starting TJ = 25C, L = 0.18mH This value determined from sample failure population, RG = 25, IAS = 18A, VGS =10V. Part not starting TJ = 25C, L = 0.18mH, RG = 25, IAS = 18A, VGS =10V. recommended for use above this value. When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to Pulse width 1.0ms; duty cycle 2%. application note #AN-994. Coss eff. is a fixed capacitance that gives the R is measured at TJ approximately 90C. same charging time as Coss while VDS is rising from 0 to 80% VDSS . Repetitive rating; pulse width limited by
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AUIRFR/U4105Z
Ordering Information
Base part AUIRFR4105Z Package Type Dpak Standard Pack Form Tube Tape and Reel Tape and Reel Left Tape and Reel Right Tube Complete Part Number Quantity 75 2000 3000 3000 75 AUIRFR4105Z AUIRFR4105ZTR AUIRFR4105ZTRL AUIRFR4105ZTRR AUIRFU4105Z
AUIRFU4105Z
Ipak
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AUIRFR/U4105Z
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105
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